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參數(shù)資料
| 型號： | ATP201 |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 256K |
| 代理商： | ATP201 |
ATP201
No. A1547-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of August, 2009. Specications and information herein are subject
to change without notice.
Note on usage : Since the ATP201 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
0
25
50
75
100
125
150
100
80
60
20
40
120
175
IT14011
IT14968
0.1
1.0
2
3
5
7
2
10
3
2
5
7
2
0.1
IDP=105A
ID=35A
100
μs
1ms
10ms
100ms
DC
operation
Tc=25
°C
Single pulse
IT14967
04
16
12
20
8
214
18
10
6
0
2
4
6
1
3
5
8
7
9
10
VDS=15V
ID=35A
1.0
23
5 7
2
10
35 7
2
0
20
40
60
80
100
120
140
160
30
35
25
15
20
10
5
IT14969
10
μs
35
100
3
5
7
Operation in
this area is
limited by RDS(on).
PW
≤10μs
相關PDF資料 |
PDF描述 |
|---|---|
| ATP201 | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP206 | 40 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP206 | 40 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP208 | 90 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP208 | 90 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATP201_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP201-TL-H | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP201-V-TL-H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP202 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP202_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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