參數資料
| 型號： | ATF16V8BQL-15JU |
| 廠商： | Atmel |
| 文件頁數： | 16/26頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC PLD 15NS 20PLCC |
| 標準包裝： | 48 |
| 系列： | 16V8 |
| 可編程類型： | EE PLD |
| 宏單元數： | 8 |
| 輸入電壓： | 5V |
| 速度： | 15ns |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-LCC（J 形引線） |
| 供應商設備封裝： | 20-PLCC |
| 包裝： | 管件 |
| 產品目錄頁面： | 610 (CN2011-ZH PDF) |
23
7707F–AVR–11/10
AT90USB82/162
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
5.3.5
Preventing EEPROM Corruption
During periods of low V
CC, the EEPROM data can be corrupted because the supply voltage is
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
CC reset Protection circuit can
Assembly Code Example
EEPROM_read:
; Wait for completion of previous write
sbic
EECR,EEPE
rjmp
EEPROM_read
; Set up address (r18:r17) in address register
out
EEARH, r18
out
EEARL, r17
; Start eeprom read by writing EERE
sbi
EECR,EERE
; Read data from Data Register
in
r16,EEDR
ret
C Code Example
unsigned char
EEPROM_read(unsigned int uiAddress)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
;
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from Data Register */
return EEDR;
}
相關PDF資料 |
PDF描述 |
|---|---|
| ATF16V8BQL-15PU | IC PLD 15NS 20DIP |
| ATF16V8B-15SU | IC PLD EE 15NS 20-SOIC |
| IDT71342SA35PF | IC SRAM 32KBIT 35NS 64TQFP |
| 1-84984-4 | CONN FFC 14POS 1.00MM VERT PCB |
| MPC866TCVR100A | IC MPU POWERQUICC 100MHZ 357PBGA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF16V8BQL-15PC | 功能描述:EEPLD - 電子擦除可編程邏輯設備 250 GATE 15 NS WAFER - 15NS RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數:8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
| ATF16V8BQL-15PC-RET | 制造商:Atmel Corporation 功能描述: |
| ATF16V8BQL-15PI | 功能描述:EEPLD - 電子擦除可編程邏輯設備 250 GATE EPLD 15NS IND TEMP RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數:8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
| ATF16V8BQL-15PU | 功能描述:EEPLD - 電子擦除可編程邏輯設備 15 ns 20 I/O Pins 8 macorcells 8 reg RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數:8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
| ATF16V8BQL-15SC | 功能描述:EEPLD - 電子擦除可編程邏輯設備 250 GATE 15 NS WAFER - 15NS RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數:8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
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