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參數(shù)資料
| 型號： | AT49F4096A |
| 廠商： | Atmel Corp. |
| 英文描述： | 5-volt, 4-Megabit Flash Memory(5V 4M位閃速存儲器) |
| 中文描述： | 5伏特，4兆位閃存（5V的分位閃速存儲器） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 173K |
| 代理商： | AT49F4096A |
1
Features
Single Voltage Operation
– 5V Read
– 5V Programming
Fast Read Access Time - 55 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 10 μs Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
– 50 mA Active Current
– 300 μA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories orga-
nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured
with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times
to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 300 μA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F004/4096A locates the boot block at lowest order
addresses (“bottom boot”); the AT49F004T/4096AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49F004(T)/4096A(T) does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus con-
tention. Reprogramming the AT49F004(T)/4096A(T) is performed by first erasing a
4-Megabit
(512K x 8/
256K x 16)
Flash Memory
AT49F004
AT49F004T
AT49F4096A
AT49F4096AT
Preliminary
Rev. 1167A–09/98
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O14
Data Inputs/Outputs
I/O15(A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49F4096AT | 5-volt, 4-Megabit Flash Memory(5V 4M位閃速存儲器) |
| AT49F004 | 5-volt, 4-Megabit Flash Memory(5V 4M位閃速存儲器) |
| AT49F004T | 5-volt, 4-Megabit Flash Memory(5V 4M位閃速存儲器) |
| AT49F4096 | 256K x 16 5-volt Only Flash Memory(256K x 16 5V閃速存儲器) |
| AT49F512 | 512K 64K x 8 5-volt Only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49F4096A-12RC | 功能描述:IC FLASH 4MBIT 120NS 44SOIC 制造商:microchip technology 系列:- 包裝:管件 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH 存儲容量:4Mb （512K x 8，256K x 16） 寫周期時間 - 字，頁:50μs 訪問時間:120ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C（TC） 安裝類型:表面貼裝 封裝/外殼:44-SOIC（0.525"，13.34 mm 寬） 供應商器件封裝:44-SOIC 基本零件編號:AT49F4096 標準包裝:16 |
| AT49F4096A-12TC | 功能描述:IC FLASH 4MBIT 120NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT49F4096A-12TI | 功能描述:IC FLASH 4MBIT 120NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT49F4096A-55RC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| AT49F4096A-55TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
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