參數(shù)資料
型號(hào): AT49F4096
廠商: Atmel Corp.
英文描述: 256K x 16 5-volt Only Flash Memory(256K x 16 5V閃速存儲(chǔ)器)
中文描述: 256K × 16 5伏只有閃存(256K × 16 5V的閃速存儲(chǔ)器)
文件頁(yè)數(shù): 1/13頁(yè)
文件大?。?/td> 197K
代理商: AT49F4096
1
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time - 90 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K Bytes) Boot Block with Programming Lockout
– Two 8K Words (16K Bytes) Parameter Blocks
– One 232K Words (464K Bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 50 μs/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 300 μA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F4096 is a 5-volt only, 4-megabit Flash Memory organized as 256K words of
16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
device offers access times to 90 ns with power dissipation of just 275 mW. When
deselected, the CMOS standby current is less than 300
μ
A.
4-Megabit
(256K x 16)
5-volt Only
Flash Memory
AT49F4096
Rev. 0569F–12/98
Pin Configurations
Pin Name
Function
A0 - A17
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
I/O0 - I/O15
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
SOIC (SOP)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
1/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
(continued)
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