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參數(shù)資料
| 型號(hào)： | AT49F512-70TC |
| 廠(chǎng)商： | ATMEL CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 512K 64K x 8 5-volt Only Flash Memory |
| 中文描述： | 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, TSOP-32 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | AT49F512-70TC |
1
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time - 70 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 10
μ
s/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash Memory.
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70
ns with a power dissipation of just 165 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 100
μ
A.
To allow for simple in-system reprogrammability, the AT49F512 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the
entire 512K of memory and then programming on a byte by byte basis. The typical
byte programming time is a fast 10
μ
s. The end of a program cycle can be optionally
Rev. 1027C–09/98
512K (64K x 8)
5-volt Only
Flash Memory
AT49F512
512K (64K x 8)
5-volt Only
CMOS Flash
Memory
Pin Configurations
Pin Name
Function
A0 - A15
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
N
N
V
W
N
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49F512-70TI | 功能描述:IC FLASH 512KBIT 70NS 32TSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線(xiàn)） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱(chēng):AT49BV00112JC |
| AT49F512-70TU | 功能描述:IC FLASH 512KBIT 70NS 32TSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869 |
| AT49F512-70VC | 功能描述:IC FLASH 512KBIT 70NS 32VSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) |
| AT49F512-70VI | 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:512K 64K x 8 5-volt Only Flash Memory |
| AT49F512-70VU | 功能描述:IC FLASH 512KBIT 70NS 32VSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869 |
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