參數(shù)資料
型號(hào): AT49BV8192-20RI
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 8-Megabit 512K x 16 CMOS Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 200 ns, PDSO44
封裝: 0.525 INCH, PLASTIC, SOIC-44
文件頁(yè)數(shù): 9/13頁(yè)
文件大?。?/td> 148K
代理商: AT49BV8192-20RI
AT49BV/LV8192(T)
9
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
1.
2.
OE must be high only when WE and CE are both low.
For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See
note 4 under command definitions.)
For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
3.
Program Cycle Characteristics
Symbol
Parameter
Min
Typ
Max
Units
t
BP
Word Programming Time
30
μ
s
t
AS
Address Set-up Time
0
ns
t
AH
Address Hold Time
100
ns
t
DS
Data Set-up Time
100
ns
t
DH
Data Hold Time
0
ns
t
WP
Write Pulse Width
200
ns
t
WPH
Write Pulse Width High
200
ns
t
EC
Erase Cycle Time
10
seconds
OE
PROGRAM CYCLE
IDATA
ADDRESS
A0
55
5555
5555
AA
2AAA
t
BP
t
WPH
t
WP
CE
WE
AO-A18
DATA
t
AS
t
AH
t
DH
t
DS
5555
AA
OE
(1)
AA
80
Note 3
55
55
5555
5555
Note 2
AA
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
2AAA
2AAA
t
WPH
t
WP
CE
WE
AO-A18
DATA
t
AS
t
AH
t
EC
t
DH
t
DS
5555
相關(guān)PDF資料
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