參數(shù)資料
型號(hào): AT49BV8192-20RI
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 8-Megabit 512K x 16 CMOS Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 200 ns, PDSO44
封裝: 0.525 INCH, PLASTIC, SOIC-44
文件頁數(shù): 7/13頁
文件大?。?/td> 148K
代理商: AT49BV8192-20RI
AT49BV/LV8192(T)
7
AC Read Waveforms
(1)(2)(3)(4)
Notes:
1.
2.
CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
t
DF
is specified from OE or CE whichever occurs first (C
L
= 5 pF).
This parameter is characterized and is not 100% tested.
3.
4.
AC Read Characteristics
Symbol
Parameter
AT49BV/LV8192-12
AT49BV/LV8192-15
AT49BV/LV8192-20
Units
Min
Max
Min
Max
Min
Max
t
ACC
Address to Output Delay
120
150
200
ns
t
CE
(1)
CE to Output Delay
120
150
200
ns
t
OE
(2)
OE to Output Delay
0
50
0
100
0
100
ns
t
DF
(3)(4)
CE or OE to Output Float
0
30
0
50
0
50
ns
t
OH
Output Hold from OE, CE
or Address, whichever occurred first
0
0
0
ns
Input Test Waveforms and Measurement Level
t
R
, t
F
< 5 ns
Output Test Load
Note:
1. This parameter is characterized and is not 100% tested.
Pin Capacitance
(f = 1 Mhz, T = 25
°
C)
(1)
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
相關(guān)PDF資料
PDF描述
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