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參數(shù)資料
| 型號： | AT49BV4096A |
| 廠商： | Atmel Corp. |
| 英文描述： | 4-Megabit， 3-volt Flash Memory(4M位 3V閃速存儲器) |
| 中文描述： | 4兆位，3伏的快閃記憶體（4分位3V的閃速存儲器） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 172K |
| 代理商： | AT49BV4096A |
1
2Features
2.7V to 3.6V Read/Write Operation
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 30 μs Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
– 25 mA Active Current
– 50 μA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories
organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access
times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected,
the CMOS standby current is less than 50 μA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV004/4096A locates the boot block at lowest
order addresses (“bottom boot”); the AT49BV004T/4096AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49BV004(T)/4096A(T) does
not require high input voltages for programming. Reading data out of the device is
similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid
bus contention. Reprogramming the AT49BV004(T)/4096A(T) is performed by first
erasing a block of data and then programming on a byte-by-byte or word-by-word
basis.
4-Megabit
(512K x 8/
256K x 16)
Flash Memory
AT49BV004
AT49BV004T
AT49BV4096A
AT49BV4096AT
Preliminary
Rev. 1139A–09/98
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
VPP
Optional Power Supply for Faster
Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15(A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
(continued)
相關PDF資料 |
PDF描述 |
|---|---|
| AT49BV4096AT | 4-Megabit， 3-volt Flash Memory(4M位 3V閃速存儲器) |
| AT49BV004 | 4-Megabit， 3-volt Flash Memory(4M位 3V閃速存儲器) |
| AT49BV4096 | 4-Megabit 3-volt Only Flash Memory(4M位 3V閃速存儲器) |
| AT49LV4096 | 4-Megabit 3-volt Only Flash Memory(4M位 3V閃速存儲器) |
| AT49BV512 | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV4096A-11CI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| AT49BV4096A-12RC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| AT49BV4096A-12RI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| AT49BV4096A-12TC | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49BV4096A-12TI | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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