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參數(shù)資料
| 型號： | AT49BV512 |
| 廠商： | Atmel Corp. |
| 英文描述： | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 為512k 64KX8的單一2.7伏電池電壓快閃記憶體 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 118K |
| 代理商： | AT49BV512 |
1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 120 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30
μ
s/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 120 ns with power dissipation of just 90 mW over the
commercial temperature range. When the devices are deselected, the CMOS standby
current is less than 50
μ
A.
To allow for simple in-system reprogrammability, the AT49BV512 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing
the entire 1 megabit of memory and then programming on a byte by byte basis. The
512K (64K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV512
Rev. 1026C–09/98
Pin Configurations
Pin Name
Function
A0 - A15
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
N
N
V
W
N
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
相關PDF資料 |
PDF描述 |
|---|---|
| AT49BV512-12JC | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV512-12JI | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV512-12PC | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV512-12PI | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV512-12TC | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV512-12JC | 功能描述:閃存 512k (64kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49BV512-12JCSL383 | 制造商:Atmel Corporation 功能描述:NOR Flash Parallel 3V/3.3V 512Kbit 64K x 8bit 120ns |
| AT49BV512-12JI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV512-12PC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV512-12PI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
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