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參數(shù)資料
| 型號： | AT45DB321B-TC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 32-megabit 2.7-volt Only DataFlash |
| 中文描述： | 32M X 1 FLASH 2.7V PROM, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 |
| 文件頁數(shù)： | 6/32頁 |
| 文件大?。?/td> | 230K |
| 代理商： | AT45DB321B-TC |
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6
AT45DB321B
2223D–DFLASH–10/02
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE:
A
previously erased page within main memory can be programmed with the contents of
either buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 88H for buffer 1 or
89H for buffer 2, must be followed by the one reserved bit, 13 address bits (PA12 - PA0)
that specify the page in the main memory to be written, and ten additional don’t care
bits. When a low-to-high transition occurs on the CS pin, the part will program the data
stored in the buffer into the specified page in the main memory. It is necessary that the
page in main memory that is being programmed has been previously erased. The pro-
gramming of the page is internally self-timed and should take place in a maximum time
of t
P
. During this time, the status register will indicate that the part is busy.
Successive page programming operations without doing a page erase are not recom-
mended. In other words, changing bytes within a page from a “1” to a “0” during multiple
page programming operations without erasing that page is not recommended.
PAGE ERASE:
The optional Page Erase command can be used to individually erase
any page in the main memory array allowing the Buffer to Main Memory Page Program
without Built-in Erase command to be utilized at a later time. To perform a Page Erase,
an opcode of 81H must be loaded into the device, followed by one reserved bit,
13 address bits (PA12 - PA0), and ten don’t care bits. The 13 address bits are used to
specify which page of the memory array is to be erased. When a low-to-high transition
occurs on the CS pin, the part will erase the selected page to 1s. The erase operation is
internally self-timed and should take place in a maximum time of t
PE
. During this time,
the status register will indicate that the part is busy.
BLOCK ERASE:
A block of eight pages can be erased at one time allowing the Buffer
to Main Memory Page Program without Built-in Erase command to be utilized to reduce
programming times when writing large amounts of data to the device. To perform a
Block Erase, an opcode of 50H must be loaded into the device, followed by one
reserved bit, ten address bits (PA12 - PA3), and 13 don’t care bits. The ten address bits
are used to specify which block of eight pages is to be erased. When a low-to-high tran-
sition occurs on the CS pin, the part will erase the selected block of eight pages to 1s.
The erase operation is internally self-timed and should take place in a maximum time of
t
BE
. During this time, the status register will indicate that the part is busy.
Block Erase Addressing
PA12
PA11
PA10
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
0
0
0
1
1
X
X
X
3
1
1
1
1
1
1
1
1
0
0
X
X
X
1020
1
1
1
1
1
1
1
1
0
1
X
X
X
1021
1
1
1
1
1
1
1
1
1
0
X
X
X
1022
1
1
1
1
1
1
1
1
1
1
X
X
X
1023
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT45DB321B-TI | 32-megabit 2.7-volt Only DataFlash |
| AT45DB321C-CC | 32 MEGABIT 2.7 VOLT DATAFLASH |
| AT45DB321C-CI | 32 MEGABIT 2.7 VOLT DATAFLASH |
| AT45DB321C-CNC | 32 MEGABIT 2.7 VOLT DATAFLASH |
| AT45DB321C-RC | DIODE/SM,REC*1A*60V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT45DB321B-TI | 功能描述:IC FLASH 32MBIT 20MHZ 32TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT45DB321C | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32 MEGABIT 2.7 VOLT DATAFLASH |
| AT45DB321C_06 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32-megabit 2.7 volt DataFlash |
| AT45DB321-CC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB321C-CC | 功能描述:IC FLASH 32MBIT 40MHZ 24CBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
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