參數(shù)資料
型號(hào)： AT45DB321B-TC
廠商： ATMEL CORP
元件分類： DRAM
英文描述： 32-megabit 2.7-volt Only DataFlash
中文描述： 32M X 1 FLASH 2.7V PROM, PDSO32
封裝： 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
文件頁(yè)數(shù)： 2/32頁(yè)
文件大?。?/td> 230K
代理商： AT45DB321B-TC
2
AT45DB321B
2223D–DFLASH–10/02
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-
tained three step Read-Modify-Write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a SPI serial interface to sequentially access its data. DataFlash sup-
ports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout,
increases system reliability, minimizes switching noise, and reduces package size and
active pin count. The device is optimized for use in many commercial and industrial
applications where high density, low pin count, low voltage, and low power are essential.
The device operates at clock frequencies up to 20 MHz with a typical active read current
consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB321B does not require
high input voltages for programming. The device operates from a single power supply,
2.7V to 3.6V, for both the program and read operations. The AT45DB321B is enabled
through the chip select pin (CS) and accessed via a three-wire interface consisting of
the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the AT45DB321B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
FLASH MEMORY ARRAY
PAGE (528 BYTES)
BUFFER 2 (528 BYTES)
BUFFER 1 (528 BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SO
SI
相關(guān)PDF資料
PDF描述
AT45DB321B-TI 32-megabit 2.7-volt Only DataFlash
AT45DB321C-CC 32 MEGABIT 2.7 VOLT DATAFLASH
AT45DB321C-CI 32 MEGABIT 2.7 VOLT DATAFLASH
AT45DB321C-CNC 32 MEGABIT 2.7 VOLT DATAFLASH
AT45DB321C-RC DIODE/SM,REC*1A*60V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT45DB321B-TI 功能描述:IC FLASH 32MBIT 20MHZ 32TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC
AT45DB321C 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32 MEGABIT 2.7 VOLT DATAFLASH
AT45DB321C_06 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32-megabit 2.7 volt DataFlash
AT45DB321-CC 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32-Megabit 2.7-volt Only Serial DataFlash
AT45DB321C-CC 功能描述:IC FLASH 32MBIT 40MHZ 24CBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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