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參數(shù)資料
| 型號： | AT29C257-12JI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 |
| 中文描述： | 32K X 8 FLASH 5V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 562K |
| 代理商： | AT29C257-12JI |
AT29C257
Features
Fast Read Access Time - 70 ns
5-Volt-Only Reprogramming
Page Program Operation
Single Cycle Reprogram (Erase and Program)
Internal Address and Data Latches for 64-Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Program Cycle Times
Page (64-Byte) Program Time - 10 ms
Chip Erase Time - 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
50 mA Active Current
300
μ
A CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
Pin-Compatible with AT29C010A and AT29C512 for Easy System Upgrades
Description
The AT29C257 is a 5-volt-only in-system Flash programmable and erasable read only
memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 70 ns with power dissipation of just 275 mW. When the device is dese-
lected, the CMOS standby current is less than 300
μ
A. The device endurance is such
that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C257 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from a static RAM.
Reprogramming the AT29C257 is performed on a page basis; 64-bytes of data are
loaded into the device and then simultaneously programmed. The contents of the
entire device may be erased by using a 6-byte software code (although erasure before
programming is not needed).
During a reprogram cycle, the address locations and 64-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the page and then program the
latched data using an internal control timer. The end of a program cycle can be de-
tected by DATA polling of I/O7. Once the end of a program cycle has been detected
a new access for a read, program or chip erase can begin.
Pin Name
Function
A0 - A14
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
Pin Configurations
256K (32K x 8)
5-volt Only
CMOS Flash
Memory
PLCC Top View
0012K
AT29C257
4-105
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT29C257-15 | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 |
| AT29C257-15JC | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125 |
| AT29C257-90 | 256K 32K x 8 5-volt Only CMOS Flash Memory |
| AT29C432-12 | 4 Megabit 5-volt Flash with 256K E2PROM Memory |
| AT29C432-12TC | ECONOLINE: RU - Twin Independent Outputs- Output/Output Isolation 1kVDC- Power Sharing on Outputs- Input/Output Isolation 1kVDC- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No Extern. Components Required- Custom Solutions Available- Efficiency t |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29C257-12JI-T | 功能描述:IC FLASH 256KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH 存儲容量:256Kb （32K x 8） 寫周期時間 - 字，頁:10ms 訪問時間:120ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商器件封裝:32-PLCC（11.43x13.97） 基本零件編號:AT29C257 標(biāo)準(zhǔn)包裝:750 |
| AT29C257-12LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-12LI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-12PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-12PI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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