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參數(shù)資料
| 型號(hào)： | AT29C257-15 |
| 廠商： | Atmel Corp. |
| 英文描述： | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 |
| 中文描述： | 256K 32K的× 8 5伏只有閃存的CMOS |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 562K |
| 代理商： | AT29C257-15 |
AT29C257
Features
Fast Read Access Time - 70 ns
5-Volt-Only Reprogramming
Page Program Operation
Single Cycle Reprogram (Erase and Program)
Internal Address and Data Latches for 64-Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Program Cycle Times
Page (64-Byte) Program Time - 10 ms
Chip Erase Time - 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
50 mA Active Current
300
μ
A CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
Pin-Compatible with AT29C010A and AT29C512 for Easy System Upgrades
Description
The AT29C257 is a 5-volt-only in-system Flash programmable and erasable read only
memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 70 ns with power dissipation of just 275 mW. When the device is dese-
lected, the CMOS standby current is less than 300
μ
A. The device endurance is such
that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C257 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from a static RAM.
Reprogramming the AT29C257 is performed on a page basis; 64-bytes of data are
loaded into the device and then simultaneously programmed. The contents of the
entire device may be erased by using a 6-byte software code (although erasure before
programming is not needed).
During a reprogram cycle, the address locations and 64-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the page and then program the
latched data using an internal control timer. The end of a program cycle can be de-
tected by DATA polling of I/O7. Once the end of a program cycle has been detected
a new access for a read, program or chip erase can begin.
Pin Name
Function
A0 - A14
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
Pin Configurations
256K (32K x 8)
5-volt Only
CMOS Flash
Memory
PLCC Top View
0012K
AT29C257
4-105
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT29C257-15JC | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125 |
| AT29C257-90 | 256K 32K x 8 5-volt Only CMOS Flash Memory |
| AT29C432-12 | 4 Megabit 5-volt Flash with 256K E2PROM Memory |
| AT29C432-12TC | ECONOLINE: RU - Twin Independent Outputs- Output/Output Isolation 1kVDC- Power Sharing on Outputs- Input/Output Isolation 1kVDC- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No Extern. Components Required- Custom Solutions Available- Efficiency t |
| AT29C432-12TI | 4 Megabit 5-volt Flash with 256K E2PROM Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29C257-15DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-15DI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-15DM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-15DM/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C257-15JC | 功能描述:閃存 256k (32kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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