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參數(shù)資料
| 型號： | AT28BV64B-25SI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 |
| 中文描述： | 8K X 8 EEPROM 3V, 250 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, MS-013, SOIC-28 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 254K |
| 代理商： | AT28BV64B-25SI |
1
Features
Single 2.7V to 3.6V Supply
Hardware and Software Data Protection
Low Power Dissipation
– 15 mA Active Current
– 20
μA CMOS Standby Current
Fast Read Access Time - 200 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
DATA Polling for End of Write Detection
High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20
μA.
64K (8K x 8)
Battery-Voltage
Parallel EEPROM
with Page Write
and Software
Data Protection
AT28BV64B
Rev. 0299F
–05/28/99
3-Volt, 64K
E
2
PROM with
Data Protection
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note:
PLCC package pins 1 and 17
are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
D
I
I
I
A
A
N
D
V
W
N
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28BV64B-25TC | High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 |
| AT28BV64B-25TI | High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 |
| AT28BV64B-20PI | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B-20SC | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B-20SI | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28BV64B-25SU | 功能描述:電可擦除可編程只讀存儲器 200NS IND TEMP PKG- 250NS IND TEMP RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV64B-25TC | 功能描述:電可擦除可編程只讀存儲器 200NS IND TEMP PKG- 250NS COM TEMP RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV64B-25TI | 功能描述:電可擦除可編程只讀存儲器 200NS IND TEMP PKG- 250NS IND TEMP RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BVI625SC | 制造商:Atmel Corporation 功能描述: |
| AT28C010 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:1-megabit (128K x 8) Paged Parallel EEPROM |
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