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參數(shù)資料
| 型號： | AT-64023 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.230 INCH, HERMETIC SEALED, METAL PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AT-64023 |
2
AT-64023 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum[1]
VEBO
Emitter-Base Voltage
V
2.2
VCBO
Collector-Base Voltage
V
40
VCEO
Collector-Emitter Voltage
V
20
IC
Collector Current
mA
200
PT
Power Dissipation[2,3]
W
3
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance[2,4]:
θjc = 40°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. T
case = 25°C.
3. Derate at 25 mW/°C for T
c > 80°C.
4. The small spot size of this technique
results in a higher, though more
accurate determination of θjc than
do alternate methods. See MEASURE-
MENTS section “Thermal Resistance”
for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21E|2
Insertion Power Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
f = 4.0 GHz
dB
6.5
2.0
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 16 V, IC = 110 mA
f = 2.0 GHz
f= 4.0 GHz
dBm
25.5
27.5
26.5
G1 dB
1 dB Compressed Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
f = 4.0 GHz
dB
7.0
12.5
9.5
ηT
Total Efficiency[1] at 1 dB Compression:
VCE = 16 V, IC = 110 mA
f = 4.0 GHz
%
35.0
hFE
ICBO
IEBO
Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA
Collector Cutoff Current; VCB = 16 V
Emitter Cutoff Current; VEB = 1 V
—
A
20
50
200
100
5.0
Note:
1.
ηT = (RF Output Power)/(RF Input Power +VCEIC).
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