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參數(shù)資料
| 型號(hào)： | AT-64023 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.230 INCH, HERMETIC SEALED, METAL PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | AT-64023 |
AT-64023
Up to 4 GHz Linear Power Silicon Bipolar Transistor
Data Sheet
Features
High Output Power:
27.5 dBm Typical P1 dB at 2.0 GHz
26.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB Compression:
12.5 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
35% Total Efficiency
Emitter Ballast Resistors
Hermetic, Metal/Beryllia Stripline Package
Description
The AT-64023 is a high performance NPN silicon bipolar
transistor housed in a hermetic BeO flange package for
good thermal characteristics. This device is designed for
use in medium power, wide band amplifier and oscillator
applications operating over VHF, UHF and microwave
frequencies.
Excellentdeviceuniformity,performanceandreliabilityare
produced by the use of ion-implantation, self-alignment
techniques, and gold metallization in the fabrication of
these devices. The use of ion-implanted ballast resistors
ensuresuniformcurrentdistributionthroughthemultiple
emitter fingers.
230 mil BeO Package
Input
Output
Ground
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