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參數(shù)資料
| 型號： | AT-42010 |
| 英文描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高達6 GHz中等功率硅雙極型晶體管) |
| 中文描述： | 到6 GHz中等功率硅雙極晶體管芯片（高達6 GHz的中等功率硅雙極型晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 42K |
| 代理商： | AT-42010 |
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
High Output Power:
12.0 dBm Typical P
1 dB
at 2.0 GHz
20.5 dBm Typical P
1 dB
at 4.0 GHz
High Gain at
1 dB Compression:
14.0 dB Typical
G
1 dB
at 2.0 GHz
9.5 dB Typical
G
1 dB
at 4.0 GHz
Low Noise Figure:
1.9 dB Typical
NF
O
at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Hermetic Gold-ceramic
Microstrip Package
AT-42010
100 mil Package
Description
Agilent’s AT-42010 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
42010 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 20 emitter finger
interdigitated geometry yields a
medium sized transistor with
impedances that are easy to match
for low noise and medium power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50
up to 1 GHz , makes this
device easy to use as a low noise
amplifier.
The AT-42010 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
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| AT-42070 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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