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參數(shù)資料
| 型號： | AT-31625-BLK |
| 英文描述： | 4.8 V NPN Common Emitter Medium Power Output Transistor |
| 中文描述： | 4.8 V叩共發(fā)射極中等輸出功率晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AT-31625-BLK |
4-44
AT-31625 Absolute Maximum Ratings
Absolute
Maximum
[1]
1.4
16.0
9.5
320
1.0
150
-65 to 150
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Units
V
V
V
mA
W
°
C
°
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
Thermal Resistance
[3]
:
θ
jc
= 65
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 15.4 mW/
°
C for T
c
> 85
°
C.
T
c
is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
V
CE
=4.8 V, I
c
=50 mA, T
j
=150
°
C,
1-2
μ
m “hot-spot” resolution.
Electrical Specifications, T
C
= 25
°
C
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
Freq. = 900 MHz, V
= 4.8 V, I
CQ
= 5 mA, CW operation, Test Circuit A,
unless otherwise specified
Output Power
[1]
Collector Efficiency
[1]
3rd Order Intermodulation Distortion, 2 Tone Test,
P
out
each Tone = +21 dBm
[1]
Mismatch Tolerance, No Damage
[1]
P
out
η
C
IMD
3
P
in
= +19 dBm
P
in
= +19 dBm
F1 = 899 MHz
F2 = 901 MHz
P
out
= +28 dBm
dBm
%
dBc
+27.0
55
+28.0
70
-31
7:1
any phase, 2 sec duration
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 0.2 mA, open collector
V
1.4
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 1.0 mA, open emitter
V
16.0
BV
CEO
h
FE
I
CEO
Collector-Emitter Breakdown Voltage
Forward Current Transfer Ratio
Collector Leakage Current
I
C
= 5.0 mA, open base
V
CE
= 3 V, I
C
= 180 mA
V
—
μ
A
9.5
80
150
330
15
V
CEO
= 5 V
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
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