參數資料
型號: AT-31625-BLK
英文描述: 4.8 V NPN Common Emitter Medium Power Output Transistor
中文描述: 4.8 V叩共發(fā)射極中等輸出功率晶體管
文件頁數: 1/10頁
文件大小: 117K
代理商: AT-31625-BLK
4-43
4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
Features
4.8 Volt Operation
+28.0 dBm P
out
@ 900 MHz,
Typ.
70% Collector Efficiency
@900 MHz, Typ.
9 dB Power Gain @ 900 MHz,
Typ.
-31 dBc IMD
3
@ P
out
of
21dBm per Tone, 900MHz,
Typ.
50% Smaller than SOT-223
Package
Applications
Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
Output Power Device for
ISM 900, Cordless, WLAN
AT-31625
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
EMITTER 1
2
BASE
3 EMITTER
COLLECTOR
4
5965-5911E
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