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參數(shù)資料
| 型號(hào)： | ASITPV376 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | RESISTOR |
| 中文描述： | NPN硅射頻功率晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 67K |
| 代理商： | ASITPV376 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
UNITS
V
BV
CER
I
C
= 100 mA
R
BE
= 10
60
V
BV
CBO
I
C
= 100 mA
60
V
BV
EBO
I
E
= 20 mA
4.0
V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
10
120
---
C
ob
V
CB
= 30 V
f = 1.0 MHz
150
pF
P
out
V
CE
= 28 V
I
C
= 3.5 A f = 225 MHz
20
W
y
V
CE
= 28 V I
E
= 3.5 A P
REF
=20 W
LOAD
VSWR =
∞
:1 f = 225 MHz
NO DEGRADATION IN OUTPUT POWER
IMD
1
Pref = 30 W
VISION CARRIER
= -8.0 dB
SOUND CARRIER
= -7.0 dB
SIDEBAND SIG
. = -16 dB
V
CE
= 28 V I
E
= 3.5 A f = 225 MHz
-53
dB
NPN SILICON RF POWER TRANSISTOR
TPV376
DESCRIPTION:
The
ASI TPV376
is a Common
Emitter Device Designed for High
Linearity Class A Television Band III
(170-230 MHz) Applications.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
16 A
V
CB
60 V
P
DISS
150 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.2
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .550 4L STUD(1/4)
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|---|---|
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