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參數(shù)資料
| 型號(hào)： | ASITPV6030 |
| 廠商： | Advanced Semiconductor, Inc. |
| 元件分類： | 振蕩器 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 14引腳DIP封裝，5.0伏，高速CMOS/TTL電平，時(shí)鐘振蕩器 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 14K |
| 代理商： | ASITPV6030 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 35 mA
BV
CER
I
C
= 35 mA
BV
EBO
I
E
= 10 mA
I
CER
V
CE
= 30 V R
BE
= 75
h
FE
V
CE
= 10 V I
C
= 2.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
UNITS
V
V
R
BE
= 75
40
4.0
V
mA
10
15
100
---
C
OB
V
CB
= 28 V
f = 1.0 MHz
45
pF
P
G
IMD
V
CC
= 25 V I
C
= 4.5 A f = 860 MHz
P
OUT
= 20 W
95
10.5
-52
40
-51
dB
dBc
P
OUT
V
CE
= 25 V I
C
= 4.5 A f = 860 MHz
35
W
NPN SILICON RF POWER TRANSISTOR
TPV6030
DESCRIPTION:
The
ASI TPV6030
is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
Common Emitter
P
G
= 9.5 dB at 35 W/860 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
15 A
V
CEO
28 V
V
CBO
55 V
V
EBO
4.0 V
P
DISS
160 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.1 °C/W
PACKAGE STYLE .400 BAL FLG(C)
MINIMUM
inches / mm
.380 / 9.65
.120 / 3.05
.780 / 19.81
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.130 / 3.30
.820 / 20.83
.390 / 9.91
1.090 / 27.69
H
DIM
K
L
I
J
.003 / 0.08
.060 / 1.52
.007 / 0.18
.070 / 1.78
.205 / 5.21
N
M
.850 / 21.59
.870 / 22.10
.220 / 5.59
.230 / 5.84
.435 / 11.05
.082 / 2.08
.100 / 2.54
.407 / 10.34
.395 / 10.03
.080x45°
A
B
F
G
H
I
J
K
L
M
(4X).060 R
.1925
D
C
E
FULL R
N
1.335 / 33.91
1.345 / 34.16
.210 / 5.33
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