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參數(shù)資料
| 型號(hào)： | ASIMRF890 |
| 廠商： | Advanced Semiconductor, Inc. |
| 元件分類： | 振蕩器 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 14引腳DIP封裝，5.0伏，高速CMOS/TTL電平，時(shí)鐘振蕩器 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | ASIMRF890 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CES
I
C
= 5.0 mA
BV
EBO
I
E
= 5.0 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
UNITS
V
V
V
μ
A
---
55
4.0
500
10
100
C
OB
V
CB
= 30 V
f = 1.0 MHz
2.0
pF
P
G
η
C
V
CC
= 24 V
P
OUT
= 2.0 V f = 900 MHz
9.0
55
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF890
DESCRIPTION:
The
ASI MRF890
is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
Pg
= 9.0 dB min. @ 900 MHz
P
1dB
= 2.0 Watts min. at 900 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
0.5 A
V
CBO
55 V
V
CER
30 V
V
EBO
4.0 V
P
DISS
7.0 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
25
°
C/W
θ
JC
E
E
B
C
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