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參數(shù)資料
| 型號(hào)： | ASIMV1807J1 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | SILICON VARACTOR DIODE |
| 中文描述： | 硅變?nèi)荻O管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | ASIMV1807J1 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
B
I
R
= 10
μ
A
C
T
V
R
= 6.0 V f = 1.0 MHz
R
S
V
R
= 6.0 V f = 50 MHz
F
OUT
P
OUT
F
IN
P
IN
NONE
TEST CONDITIONS
MINIMUM
80
TYPICAL
MAXIMUM
UNITS
V
10.8
13.2
pF
0.25
Ohms
1000
MHz
25.1
W
500
MHz
37.0
W
SILICON VARACTOR DIODE
MV1807J1
DESCRIPTION:
The
ASI MV1807J1
is a Diffused
Epitaxial Varactor Diode Designed for
Multiplier Applications.
MAXIMUM RATINGS
I
100 mA
V
80 V
P
DISS
21 W @ T
C
= 25
O
C
-65
O
C to +150
O
C
-65
O
C to +175
O
C
6.0
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE DO-4
Cathode to case
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| ASIPT9700 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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