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參數(shù)資料
| 型號(hào)： | ASIMRF571 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON RF TRANSISTOR |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 23K |
| 代理商： | ASIMRF571 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 0.1 mA
BV
CEO
I
C
= 1.0 mA
BV
EBO
I
E
= 500 μA
I
CBO
V
CB
= 8.0 V
h
FE
V
CE
= 5.0 V I
C
= 30 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
20
UNITS
V
10
V
2.5
V
10
μA
50
300
---
C
cb
V
CB
= 6.0 V
f = 1.0 MHz
0.7
1.0
pF
G
NF
V
CE
= 6.0 V
f = 1.0 GHz
I
C
= 10 mA f = 0.5 GHz
10
16.5
12
dB
NF
V
CE
= 6.0 V I
C
= 10 mA f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
1.0
1.5
2.8
2.0
dB
NPN SILICON RF TRANSISTOR
MRF571
DESCRIPTION:
The
ASI
MRF571
is Designed for low-
noise, wide dynamic range front end
amplifiers.
Applications up to 2.0 GHz.
FEATURES:
Low Noise Figure
High Gain
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
70 mA
20 V
10 V
3.0 V
1.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
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