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參數(shù)資料
| 型號(hào)： | ASI10835 |
| 廠(chǎng)商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 15K |
| 代理商： | ASI10835 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 40 mA
BV
CER
I
C
= 20 mA
BV
CBO
I
C
= 20 mA
I
CBO
V
CB
= 20 V
BV
EBO
I
E
= 5 mA
h
FE
V
CE
= 20 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
28
40
45
UNITS
V
V
V
mA
V
--
R
BE
= 51
5.0
3.0
10
C
OB
V
CB
= 25 V
20
pF
P
G
IMD
3
V
CE
= 25 V
F = 860 MHz
Vision = -8 dB Sound = -7 dB SB = -16 dB
I
C
= 2 x 900 mA
P
REF
= 14 W
8.5
9.5
-47
dB
dB
NPN SILICON RF POWER TRANSISTOR
TPV595A
DESCRIPTION:
The
TPV595A
is Designed for Class
AB Push Pull, Common Emitter from
470 to 860 MHz Applications.
FEATURES:
·
Gold Metalization
Emitter Ballast Resistors
Internal Input Matching
MAXIMUM RATINGS
I
C
2 x 2.6 A
V
CB
45 V
P
DISS
65 W @ T
C
= 25
O
C
-50
O
C to +200
O
C
-50
O
C to +200
O
C
2.5
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .250 BAL FLG
Order Code:
ASI10835
MINIMUM
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
B
C
D
E
F
G
H
I
J
A
MAXIMUM
inches / mm
.670 / 17.01
.255 / 6.48
.125 / 3.18
DIM
K
L
M
.315 / 8.00
.002 / 0.05
.075 1.91
.327 / 8.31
.006 / 0.15
.095 / 2.41
.190 / 4.83
N
.245 / 6.22
.257 / 6.53
.060 / 1.52
.092 / 2.34
.055 / 1.40
.065 / 1.65
K
.020 x 45°
J
F
E
D
C
H
I
G
L
M
N
B
A
.130 N.050 x 45°
.065 / 1.65
.555 / 14.10
.739 / 18.77
.565 / 14.35
.750 / 19.05
Collector - 2 places
Emitter connected to flange
Base - 2 places
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