參數(shù)資料
型號: AS8S512K32AQ1-12L/IT
廠商: AUSTIN SEMICONDUCTOR INC
元件分類: SRAM
英文描述: 512K x 32 SRAM SRAM MEMORY ARRAY
中文描述: 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68
封裝: CERAMIC, QFP-68
文件頁數(shù): 8/13頁
文件大?。?/td> 191K
代理商: AS8S512K32AQ1-12L/IT
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
AC TEST CONDITIONS
NOTE:
1. This parameter is sampled.
OH
OL
I
Current Source
Vz = 1.5V
(Bipolar
Supply)
Device
Under
Test
Ceff = 50pf
-+
+
NOTES:
Vz is programmable from -2V to + 7V.
I
OL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH and VOL.
I
OL and IOH are adjusted to simulate a typical resistive load
circuit.
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
Test Specifications
SYMBOL
PARAMETER
MAX
UNITS
CADD
A0 - A18 Capacitance
50
pF
COE
OE\ Capacitance
50
pF
CWE, CCS
WE\ and CS\ Capacitance
20
pF
CIO
I/O 0- I/O 31 Capacitance
20
pF
CWE ("A" version)
WE\ Capacitance
50
pF
CAPACITANCE (V
IN = 0V, f = 1MHz, TA = 25
oC)1
Figure 1
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