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參數(shù)資料
| 型號： | AS8S512K32AQ1-12L/IT |
| 廠商： | AUSTIN SEMICONDUCTOR INC |
| 元件分類： | SRAM |
| 英文描述： | 512K x 32 SRAM SRAM MEMORY ARRAY |
| 中文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 191K |
| 代理商： | AS8S512K32AQ1-12L/IT |
SRAM
AS8S512K32
& AS8S512K32A
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
Rev. 5.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
7. At any given temperature and voltage condition,
t
HZCS, is less than tLZCS, and tHZWE is less than tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip selects and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. t
RC= READ cycle time.
12. Chip enable (CS\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
13. I
CC is for 32 bit mode.
NOTES
1. All voltages referenced to V
SS (GND).
2. -2V for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
4. This parameter guaranteed but not tested.
5. Test conditions as specified with output loading as
shown in Fig. 1 unless otherwise noted.
6. t
HZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2.
Transition is measured +/- 200 mV typical from steady state
voltage, allowing for actual tester RC time constant.
RC(MIN)
unloaded, and f=
HZ.
t
1
LOW V
CC DATA RETENTION WAVEFORM
LOW POWER CHARACTERISTICS (L Version Only)
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
NOTES
VCC for Retention Data
VDR
2V
VCC = 2V
ICCDR
20
mA
VCC = 3V
ICCDR
28*
mA
Chip Deselect to Data
Retention Time
tCDR
0ns
4
Operation Recovery Time
tR
tRC
ns
4, 11
Data Retention Current
All Inputs @ Vcc + 0.2V
or Vss + 0.2V,
CS\ = Vcc + 0.2V
CONDITIONS
123456789012345678
12345
12345678
123456789012345678
12345
12345678
DATA RETENTION MODE
4.5V
V
DR>2V
V
DR
tCDR
tR
V
CC
CS\ 1-4
* -12 and -15 have a 32mA limit.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS8S512K32AQ1-15/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S512K32AQ1-15/Q | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S512K32AQ1-15/SPACE | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S512K32AQ1-15/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S512K32AQ1-15L/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 32 SRAM SRAM MEMORY ARRAY |
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