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參數(shù)資料
| 型號(hào)： | AS8F2M32QW-120/XT |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | PROM |
| 英文描述： | 2M X 32 FLASH 5V PROM MODULE, 120 ns, PQFP68 |
| 封裝： | QFP-68 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 385K |
| 代理商： | AS8F2M32QW-120/XT |
AUSTIN SEMICONDUCTOR, INC.
FLASH
AS8F2M32
AS8F2M32
Rev. 2.5 05/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(V
CC
= 5.0V, -55°C < T
A
< +125°C)
MIN
MAX
MIN
MAX
MIN
MAX
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Chip Select Setup Time
tELWL
tCS
000
ns
Write Enable Pulse Width
tWLWH
tWP
45
50
ns
Address Setup Time
tAVWL
tAS
000
ns
Data Setup Time
tDVWH
tDS
45
50
ns
Data Hold Time
tWHDX
tDH
000
ns
Address Hold Time
tWLAX
tAH
45
50
ns
Write Enable Pulse Width High
tWHWL
tWPH
20
ns
Duration of Byte Progreamming Operation
1
tWHWH1
300
s
Sector Erase
2
tWHWH2
15
sec
Read Recovery Time before Write
tGHWL
000
s
VCC Setup Time
tVCS
50
s
Chip Programming Time
3
44
sec
Chip Erase Time
4
256
sec
Output Enable Hold Time
5
tOEH
10
ns
RESET\ Pulse Width
tRP
500
ns
Read Cycle Time
tAVAV
tRC
90
120
150
ns
Address Access Time
tAVQV
tACC
90
120
150
ns
Chip Select Access Time
tELQV
tCE
90
120
150
ns
Output Enable to Output Valid
tGLQV
tOE
40
50
55
ns
Chip Select High to Output High
6
tEHQZ
tDF
20
30
35
ns
Output Enable High to Output High
6
tGHQZ
tDF
20
30
35
ns
Output Hold from Adresses, CS\ or
OE\ Change, whichever is First
tAXQX
tOH
000
ns
RST Low to Read Mode
6
tReady
20
s
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Write Enable Setup Time
tWLEL
tWS
000
ns
Chip Select Pulse Width
tELEH
tCP
45
50
ns
Address Setup Time
tAVEL
tAS
000
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
000
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
ns
Duration of Byte Progreamming Operation
1
tWHWH1
300
s
Sector Erase Time
2
tWHWH2
15
sec
Read Recovery Time
tGHEL
000
s
Chip Programming Time
3
44
sec
Chip Erase Time
4
256
sec
Output Enable Hold Time
5
tOEH
10
ns
CS\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS)
UNITS
WE\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS)
READ-ONLY OPERATIONS
SYM
-90
-120
-150
PARAMETER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS8F2M32QW-150/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-150/MIL | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-150/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-90/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-90/MIL | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
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