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參數(shù)資料
| 型號： | AS8F2M32QW-120/XT |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | PROM |
| 英文描述： | 2M X 32 FLASH 5V PROM MODULE, 120 ns, PQFP68 |
| 封裝： | QFP-68 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 385K |
| 代理商： | AS8F2M32QW-120/XT |
AUSTIN SEMICONDUCTOR, INC.
FLASH
AS8F2M32
AS8F2M32
Rev. 2.5 05/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
GENERAL DESCRIPTION (cont.)
The Sector Erase Architecture allows memory sectors to be erased
and reprogrammed without affecting the data contents of other sectors.
The device is fully erased when shipped from the factory.
Hardware Data Protection measures include a low VCC detector
that automatically inhibits write operations during power transitions. The
Hardware Sector Protection feature disables both program and erase
operations in any combinations of the sectors of memory. This can be
achieved via programming equipment.
The Erase Suspend feature enables the user to put erase on hold for
any period of time to read data form, or program data to, any sector
that is not selected for erasure. True background erase can thus be
achieved.
The Hardware RESET\ pin terminates any operation in progress
and resets the internal state machine to reading array data. The
RESET\ pin may be tied to the system reset circuitry. A system reset
would thus also reset the device, enabling the system microprocessor to
read the boot-up firmware from the FLASH memory.
The system can place the device into the standby mode. Power
consumption is greatly reduced in this mode.
FIGURE 2: FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
PIN
DESCRIPTION
I/O0-31
Data Inputs/Outputs
A0-20
Address Inputs
WE\1-4
Write Enables
CS\1-4
Chip Selects
OE\
Output Enable
VCC
Power Supply
GND
Ground
RESET\
Reset
WE1\, CS1\WE2\, CS2\WE3\, CS3\WE4\, CS4\
RESET\
OE\
A0 - A20
2M x 8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS8S128K32Q1-15/IT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-15/XT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-17/883C | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-17/IT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-17/XT | 128K x 32 SRAM SRAM MEMORY ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS8F2M32QW-150/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-150/MIL | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-150/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-90/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
| AS8F2M32QW-90/MIL | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:2M x 32 FLASH FLASH MEMORY MODULE |
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