參數(shù)資料
型號(hào): AS5LC1008DJ-15/XT
廠商: AUSTIN SEMICONDUCTOR INC
元件分類: SRAM
英文描述: High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
中文描述: 128K X 8 STANDARD SRAM, 15 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, SOJ-32
文件頁數(shù): 4/10頁
文件大小: 521K
代理商: AS5LC1008DJ-15/XT
SRAM
AS5LC1008
AS5LC1008
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < T
A
< +125oC or -40oC to +85oC; Vcc = 3.3V +0.3V)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
Output HIGH Voltage
VOH
VCC = Min., IOH = -4.0mA
2.4
---
V
Output LOW Voltage
VOL
VCC = Min., IOL = 8.0mA
---
0.4
V
Input HIGH Voltage
VIH
2.2
VCC + 0.3
V
Input LOW Voltage
1
VIL
-0.3
0.8
V
Input Leakage
ILI
GND < VIN < VCC
-5
5
A
Output Leakage
ILO
GND < VOUT < VCC;
Outputs Disabled
-5
5
A
NOTE: 1. V
IL = -3.0V for pulse width less than 10ns.
POWER SUPPLY CHARACTERISTICS1
(-55oC < T
A
< +125oC or -40oC to +85oC; Vcc = 3.3V +0.3V)
NOTE: 1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE1,2
PARAMETER
SYMBOL CONDITIONS
MAX
UNIT
Input Capacitance
CIN
VIN = 0V
6pF
Input/Output Capacitance
CI/O
VOUT = 0V
8pF
NOTE:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1MHz, V
CC
= 3.3V.
PARAMETER
SYM
CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX UNIT
VCC Dynamic Operating
Supply Current
ICC
VCC = Max, CE\ = VIL,
IOUT = 0 mA, f = Max
---
160
---
140
---
130
---
120
mA
ISB
VCC = Max, VIN = VIH or VIL
CE\ > VIH, f = Max
---
45
---
40
---
35
---
30
mA
ISB1
VCC = Max, VIN = VIH or VIL
CE\ > VIH, f = 0
---
30
---
30
---
30
---
30
mA
CMOS Standby Current
(CMOS Inputs)
ISB2
VIN > VCC - 0.2V,
or VIN < 0.2V, f = 0
---
10
---
10
---
10
---
10
mA
-10
-12
-20
TTL Standby Current
(TTL Inputs)
-15
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