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參數(shù)資料
| 型號(hào)： | APTM100UM45F-ALN |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 215 A, 1000 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | APTM100UM45F-ALN |
APTM100UM45F-AlN
A
P
T
M
100U
M
45F
-A
lN
–R
ev
1
A
ug
us
t,2005
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=670V
RG=0.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=670V
RG=0.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
20
24
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(m
J)
VDS=670V
RG=0.5
TJ=125°C
L=100H
Eon
Eoff
0
6
12
18
24
30
36
01
23
45
6
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
ne
rg
y(
m
J)
Switching Energy vs Gate Resistance
VDS=670V
ID=215A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
20
50
80
110
140
170
200
ID, Drain Current (A)
F
req
ue
n
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=0.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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