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參數(shù)資料
| 型號： | APTM100UM45F-ALN |
| 元件分類： | JFETs |
| 英文描述： | 215 A, 1000 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 308K |
| 代理商： | APTM100UM45F-ALN |
APTM100UM45F-AlN
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APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
600
A
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
3
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 107.5A
45
55
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 30mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
42.7
Coss
Output Capacitance
7.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1.3
nF
Qg
Total gate Charge
1602
Qgs
Gate – Source Charge
204
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 215A
1038
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
14
Td(off)
Turn-off Delay Time
140
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 215A
RG = 0.5
55
ns
Eon
Turn-on Switching Energy
7.2
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5
4.3
mJ
Eon
Turn-on Switching Energy
12
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5
5.8
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
215
IS
Continuous Source current
(Body diode)
Tc = 80°C
160
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 215A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
Tj = 25°C
310
trr
Reverse Recovery Time
Tj = 125°C
625
ns
Tj = 25°C
12
Qrr
Reverse Recovery Charge
IS = - 215A
VR = 500V
diS/dt = 600A/s
Tj = 125°C
36
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 215A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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