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參數資料
| 型號： | APTGT50TL601G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 7/7頁 |
| 文件大?。?/td> | 226K |
| 代理商： | APTGT50TL601G |
APTGT50TL601G
APT
G
T
50T
L
601G–
Rev0
M
ar
ch,
2
009
www.microsemi.com
7- 7
CR5 & CR6 Typical performance curve
Energy losses vs Collector Current
0
0.5
1
1.5
0
2040
6080
100
IF (A)
E
(m
J)
VCE = 300V
VGE = 15V
RG = 8.2
TJ = 150°C
0
0.2
0.4
0.6
0.8
1
1.2
5
15
253545
5565
Gate Resistance (ohms)
E
(m
J)
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristic of diode
TJ=25°C
TJ=150°C
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I F
(A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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