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參數(shù)資料
| 型號： | APTGT50TL601G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 226K |
| 代理商： | APTGT50TL601G |
APTGT50TL601G
APT
G
T
50T
L
601G–
Rev0
M
ar
ch,
2
009
www.microsemi.com
6- 7
CR1 to CR4 Typical performance curve
Energy losses vs Collector Current
0
0.25
0.5
0.75
1
0
10
203040
5060
IF (A)
E
(m
J)
VCE = 300V
VGE = 15V
RG = 10
TJ = 150°C
0
0.25
0.5
0.75
1
0
1020
3040
50
60
70
Gate Resistance (ohms)
E
(m
J)
VCE = 300V
VGE =15V
IC = 30A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.5
1
1.5
2
2.5
3
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristic of diode
TJ=25°C
TJ=150°C
0
10
20
30
40
50
60
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I F
(A)
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