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參數(shù)資料
| 型號： | APTGS50X170E2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 150K |
| 代理商： | APTGS50X170E2 |
APTGS50X170E2
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 1mA
V
GE
= 0V
V
CE
= 1700V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 2.2 mA
V
GE
= 20V, V
CE
= 0V
Min
1700
3
Typ
0.02
1
2.7
3.2
Max
0.1
3.3
6.5
100
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
mA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 30
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 30
Min
Typ
Max
Unit
C
ies
Input Capacitance
3500
pF
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn Off Energy
100
100
800
30
100
100
900
30
30
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
I
F
= 50A
V
GE
= 0V
I
F
= 50A
V
R
= 900V
di/dt =750A/μs
I
F
= 50A
V
= 900V
di/dt =750A/μs T
j
= 125°C
Min
Typ
2.2
2.0
2
Max
2.6
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
4
mJ
6
Q
rr
Reverse Recovery Charge
12
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.37
0.63
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
3400
V
T
J
T
STG
T
C
-40
-40
-40
2
150
125
125
3.5
185
°C
To Heatsink
M5
N.m
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGS50X170E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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