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參數(shù)資料
| 型號： | APTGS50X170E2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 150K |
| 代理商： | APTGS50X170E2 |
APTGS50X170E2
A
APT website – http://www.advancedpower.com
1 - 3
Application
Features
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGS50X170E2
(Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Parameter
Max ratings
1700
100
50
150
±20
350
100A@1600V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operation Area
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
V
CES
= 1700V
I
C
= 50A @ Tc = 80°C
AC Motor control
Non Punch Through (NPT) Low Loss IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGS50X170E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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