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參數(shù)資料
| 型號： | APTGF50VDA60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 65 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 223K |
| 代理商： | APTGF50VDA60T3G |
APTGF50VDA60T3G
APTGF50VDA60
T
3G
–
Rev
1
S
eptem
ber,
2009
www.microsemi.com
6 – 6
Cies
Cres
Coes
100
1000
10000
0
1020
30
4050
C
,Capaci
tan
ce
(p
F)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
er
m
a
lI
m
pe
dan
ce
(°
C/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
hard
switching
ZCS
ZVS
0
40
80
120
160
200
240
0
2040
6080
100
IC, Collector Current (A)
F
max
,Op
erati
n
g
Fr
eq
u
e
ncy
(kHz
)
VCE = 400V
D = 50%
RG = 2.7
TJ = 125°C
TC= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
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| APTGF50X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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| APTGF50X120E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X120P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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