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參數(shù)資料
| 型號： | APTGF50VDA60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 65 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 223K |
| 代理商： | APTGF50VDA60T3G |
APTGF50VDA60T3G
APTGF50VDA60
T
3G
–
Rev
1
S
eptem
ber,
2009
www.microsemi.com
5 – 6
VGE = 15V
20
30
40
50
60
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(on),
Turn-
O
n
D
e
la
y
Ti
me
(
n
s)
Turn-On Delay Time vs Collector Current
Tj = 125°C
VCE = 400V
RG = 2.7
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
75
100
125
150
175
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
t
d
(of
f)
,Turn-O
ff
De
lay
Time
(n
s)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.7
VGE=15V,
TJ=125°C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tr
,Ri
se
T
im
e
(n
s)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tf
,Fa
ll
Ti
me
(n
s)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7
TJ=125°C,
VGE=15V
0
0.5
1
1.5
2
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
on
,Turn-O
n
E
n
e
rgy
Los
s
(m
J
)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.7
TJ = 125°C
0
0.5
1
1.5
2
2.5
0
255075
100
125
150
ICE, Collector to Emitter Current (A)
E
of
f,
Turn-
of
fE
n
e
rgy
Los
s
(mJ
)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.7
Eon, 50A
Eoff, 50A
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Sw
it
ch
ing
E
n
e
rgy
Los
se
s
(m
J
)
VCE = 400V
VGE = 15V
TJ= 125°C
0
20
40
60
80
100
120
0
200
400
600
I C
,C
o
ll
e
c
to
rC
u
rrent
(
A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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