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參數(shù)資料
| 型號(hào)： | APTGF50TL60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 65 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | APTGF50TL60T3G |
APTGF50TL60T3G
APT
G
F50TL
60T
3G
–
Rev
0
M
ar
ch,
2009
www.microsemi.com
6- 8
VGE = 15V
20
30
40
50
60
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(o
n)
,T
u
rn
-O
n
Del
ay
Ti
me
(
n
s)
Turn-On Delay Time vs Collector Current
Tj = 125°C
VCE = 400V
RG = 2.7
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
75
100
125
150
175
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(o
ff
),
T
u
rn-
O
ff
De
la
y
T
im
e
(n
s)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.7
VGE=15V,
TJ=125°C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tr
,
R
ise
T
im
e
(
n
s)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
0
255075
100
125
150
ICE, Collector to Emitter Current (A)
tf
,F
a
ll
T
im
e
(n
s
)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7
TJ=125°C,
VGE=15V
0
0.5
1
1.5
2
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
on
,T
u
rn
-O
n
E
n
erg
y
Lo
ss
(
m
J)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.7
TJ = 125°C
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
off
,T
u
rn
-o
ff
En
ergy
L
o
ss
(mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.7
Eon, 50A
Eoff, 50A
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
it
c
h
in
g
En
e
rgy
L
o
sses
(
m
J)
VCE = 400V
VGE = 15V
TJ= 125°C
0
20
40
60
80
100
120
0
200
400
600
I C
,
C
o
lle
c
tor
C
u
rr
e
nt
(A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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