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參數(shù)資料
| 型號： | APTGF200U60D4 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Single switch NPT IGBT Power Module |
| 中文描述： | 單開關(guān)不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 273K |
| 代理商： | APTGF200U60D4 |
APTGF200U60D4
A
APT website – http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
V
CE
(V)
2
2.5
3
3.5
I
C
(
Output Characteristics
V
GE
=15V
V
GE
=12V
V
GE
=20V
V
GE
=9V
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
V
CE
(V)
I
C
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
300
350
400
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
Energy losses vs Collector Current
Eon
Eoff
Er
0
2.5
5
7.5
10
12.5
15
0
50
100 150 200 250 300 350 400
I
C
(A)
E
V
CE
= 300V
V
GE
= 15V
R
G
= 1.5
T
J
= 125°C
Eon
Eoff
Er
0
4
8
12
16
0
2
4
6
8
10
12
Gate Resistance (ohms)
E
V
CE
= 300V
V
GE
=15V
I
C
= 200A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
100
200
300
400
500
0
100
200
300
400
500
600
V
CE
(V)
I
C
V
GE
=15V
T
J
=125°C
R
G
=1.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
IGBT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF20X60BTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF20X60E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF20X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF20X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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