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參數(shù)資料
| 型號(hào)： | APTGF200U60D4 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Single switch NPT IGBT Power Module |
| 中文描述： | 單開(kāi)關(guān)不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | APTGF200U60D4 |
APTGF200U60D4
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
1
1
500
2.45
6.5
400
μA
mA
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
V
GE
= 15V
I
C
= 200A
V
GE
= V
CE
, I
C
= 4mA
V
GE
= 20V, V
CE
= 0V
1.95
2.2
5.5
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
4.5
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5
Min
Typ
9
0.8
163
43
Max
Unit
nF
253
33
183
49
285
41
4.6
6.3
ns
ns
mJ
Test Conditions
Min
600
Typ
1.25
1.2
4.1
12
19
Max
250
500
1.6
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
V
F
Diode Forward Voltage
I
F
= 200A
V
GE
= 0V
I
F
= 200A
V
R
= 300V
di/dt
=4000A/μs
V
E
R
Reverse Recovery Energy
mJ
Q
rr
Reverse Recovery Charge
μC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF20X60BTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF20X60E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF20X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF20X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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