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參數(shù)資料
| 型號(hào)： | APTGF200U120DG |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 275 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, MODULE-5 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | APTGF200U120DG |
APTGF200U120DG
A
P
T
G
F
200
U
120D
G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
4 – 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
200
400
600
800
02
46
8
Ic
,C
o
lle
ct
o
rC
u
rre
nt
(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
50
100
150
200
0
123
4
Ic
,C
o
ll
ec
to
rC
u
rre
nt
(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
200
400
600
800
1000
1200
048
12
16
VGE, Gate to Emitter Voltage (V)
Ic
,C
o
ll
ec
to
rC
u
rre
nt
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
VCE=240V
VCE=600V
VCE=960V
0
2
4
6
8
10
12
14
16
18
0
200
400
600
800 1000 1200 1400
Gate Charge (nC)
V
GE
,
Gat
e
to
E
m
it
ter
V
o
lt
ag
e
(V
)
IC = 200A
TJ = 25°C
Ic=400A
Ic=200A
Ic=100A
0
1
2
3
4
5
6
7
8
9
10111213141516
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
V
CE
,C
o
lle
ct
o
rt
o
E
m
it
te
rV
o
lt
ag
e
(V
)
TJ = 25°C
250s Pulse Test
< 0.5% Duty cycle
Ic=400A
Ic=200A
Ic=100A
0
1
2
3
4
5
6
-50
-25
0
255075
100
125
TJ, Junction Temperature (°C)
V
CE
,Co
lle
ct
o
rt
o
E
m
it
te
r
V
o
lt
ag
e
(
V
)
On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
C
o
ll
ec
tor
to
E
m
it
te
rB
re
a
kdow
n
V
o
lt
a
g
e
(N
o
rm
alize
d
)
Breakdown Voltage vs Junction Temp.
0
50
100
150
200
250
300
350
-25
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Ic
,DC
Co
lle
ct
o
rCu
rr
e
n
t(
A
)
DC Collector Current vs Case Temperature
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