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參數(shù)資料
| 型號(hào)： | APTGF200U120DG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 275 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, MODULE-5 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | APTGF200U120DG |
APTGF200U120DG
A
P
T
G
F
200
U
120D
G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
500
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
750
A
Tj = 25°C
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 200A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 4mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
13.8
Coes
Output Capacitance
1.32
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.88
nF
Qg
Total gate Charge
1320
Qge
Gate – Emitter Charge
140
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 200A
800
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2
30
ns
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
22
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2
Tj = 125°C
12.2
mJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
Tj = 25°C
750
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
1000
A
IF
DC Forward Current
Tc = 70°C
240
A
IF = 240A
2
2.5
IF = 480A
2.3
VF
Diode Forward Voltage
IF = 240A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
Tj = 125°C
470
ns
Tj = 25°C
4.8
Qrr
Reverse Recovery Charge
IF = 240A
VR = 800V
di/dt =800A/s
Tj = 125°C
16
C
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