參數(shù)資料
型號(hào)： APTGF15H120T3
廠商： Advanced Power Technology Ltd.
英文描述： Full - Bridge NPT IGBT Power Module
中文描述： 全-橋不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 329K
代理商： APTGF15H120T3
APTGF15H120T3
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 1200V
V
GE
=15V
I
C
= 15A
V
GE
= V
CE
, I
C
= 1mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1
1
3.2
4.0
Max
500
3.7
6
400
Unit
V
μA
mA
1200
2.5
4
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
X
E
off
Turn-off Switching Energy
Y
X
E
on
includes diode reverse recovery
Y
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
1000
150
70
99
10
70
60
50
315
30
60
50
356
40
2
1
Max
Unit
pF
V
GE
= 15V
V
Bus
= 300V
I
C
=15A
nC
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 15A
R
G
= 33
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 15A
R
G
= 33
ns
ns
mJ
Test Conditions
Min
1200
Typ
15
2.9
2.6
0.5
Max
250
500
3.4
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 15A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
μs
T
j
= 25°C
T
j
= 125
0.4
1.2
Q
rr
Reverse Recovery Charge
I
F
= 15A
V
R
= 600V
di/dt =400A/μs
μC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF15H120T3G 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF15X120E2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF15X120E2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X120P2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF15X120P2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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