參數(shù)資料
型號: APTC80A10SCT
廠商: Advanced Power Technology Ltd.
英文描述: Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
中文描述: 相腳系列
文件頁數(shù): 4/7頁
文件大?。?/td> 321K
代理商: APTC80A10SCT
APTC80A10SCT
A
APT website – http://www.advancedpower.com
4 – 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
20
40
60
80
100
120
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
30
60
90
120
150
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xRDS(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10
20
30
40
50
60
70
80
90
I
D
, Drain Current (A)
R
D
(
Normalized to
V
GS
=10V @ 21A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC Drain Current vs Case Temperature
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