參數資料
型號: APT65GP60JDQ2
廠商: Advanced Power Technology Ltd.
英文描述: POWER MOS 7 IGBT
中文描述: IGBT的功率MOS 7
文件頁數: 9/9頁
文件大?。?/td> 470K
代理商: APT65GP60JDQ2
0
APT65GP60JDQ2
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
Figure 33. Diode Test Circui
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
μ
H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
31.5 (1.240)
7.8 (.307)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
38.0 (1.496)
14.9 (.587)
11.8 (.463)
8.9 (.350)
Hex Nut M4
0.75 (.030)
12.6 (.496)
25.2 (0.992)
1.95 (.077)
* Emitter/Anode
Collector/Cathode
Gate
*
r = 4.0 (.157)
4.0 (.157)
H=4.8 (.187)
(4 places)
3.3 (.129)
* Emitter/Anode
Emitter/Anode terminals are
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
APT6017LLL
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相關代理商/技術參數
參數描述
APT65GP60L2DF2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT65GP60L2DQ2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT65GP60L2DQ2G 功能描述:IGBT 600V 198A 833W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT66F60B2 功能描述:MOSFET N-CH 600V 70A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT66F60L 功能描述:MOSFET N-CH 600V 70A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件