參數(shù)資料
型號(hào)： APT60M80L2VFR
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS V FREDFET
中文描述： 功率MOS V FREDFET
文件頁數(shù)： 4/5頁
文件大小： 171K
代理商： APT60M80L2VFR
APT60M80L2VFR
0
I
D
= 65A
50,000
10,000
5000
1000
500
100
200
100
10
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
Crss
Ciss
Coss
10mS
1mS
100μS
TJ =+150°C
TJ =+25°C
260
100
10
1
16
12
8
4
0
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
600
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
V
G
,
I
D
,
I
D
,
C
I
(A)
I
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
I
D
(A)
R
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100μH
E
on
E
off
t
r
t
f
S
μ
J
t
d
d
μ
J
t
r
f
(
30
50
70
90
110
30
50
70
90
110
30
40
50
60
70
80
90
100 110
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 400V
I
D
= 65A
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
500
400
300
200
100
0
8,000
6,000
4,000
2,000
0
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100μH
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
150
100
50
0
20,000
15,000
10,000
5,000
0
1
10
100
600
0
10
20
30
40
50
0
100
200
300
400
500
600 700 800
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VDS=300V
VDS=120V
VDS=480V
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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