- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366573 > APT60M75JVFR (Advanced Power Technology Ltd.) POWER MOS V FREDFET PDF資料下載
參數(shù)資料
| 型號： | APT60M75JVFR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS V FREDFET |
| 中文描述： | 功率MOS V FREDFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 183K |
| 代理商： | APT60M75JVFR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
APT60M75JVFR
0
2
-
6
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
5
10
50
100
600
.01
.1
1
10
50
0
250
500
750
1000
1250
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
300
100
50
10
5
1
.5
.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
60,000
10,000
5,000
1,000
500
200
100
50
10
5
1
VDS=300V
VDS=480V
I
D
= I
D
[Cont.]
10μS
1mS
10mS
100mS
DC
100μS
VDS=120V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT60M75L2FLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT60M75L2LL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT60M80L2VFR | POWER MOS V FREDFET |
| APT60M80L2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT60N60BCS | Super Junction MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60M75JVR | 功能描述:MOSFET N-CH 600V 62A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M75L2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT60M75L2FLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT60M75L2FLLG | 功能描述:MOSFET N-CH 600V 73A TO-264MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT60M75L2LL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。