參數(shù)資料
型號(hào)： APT60M75JVFR
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS V FREDFET
中文描述： 功率MOS V FREDFET
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 183K
代理商： APT60M75JVFR
DYNAMIC CHARACTERISTICS
APT60M75JVFR
0
2
-
6
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L =
1.87
mH, R
G
=
25
, Peak I
L
= 62A
5
I
S
≤
I
D
= 62A,
di
/
dt
= 100A/μs,
T
j
≤
150°C, R
G
= 2.0
V
R
= 600V.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= - 62A)
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -62A,
di
/
dt
= 100A/μs)
Reverse Recovery Charge
(I
S
= -62A,
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -62A,
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 62A @ 25°C
V
GS
= 15V
V
DD
= 300V
I
D
= 62A @ 25°C
R
G
= 0.6
MIN
TYP
16500
1900
750
700
80
330
20
20
80
12
MAX
19800
2660
1125
1050
120
495
40
40
120
24
UNIT
pF
nC
ns
MIN
TYP
MAX
62
248
1.3
15
300
600
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
1.8
7.4
16
30
THERMAL/PACKAGE CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
V
Isolation
Torque
MIN
TYP
MAX
0.18
40
2500
10
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Z
θ
J
,
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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