- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51267 > APT50M85B2VR (MICROSEMI POWER PRODUCTS GROUP) 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50M85B2VR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 139K |
| 代理商： | APT50M85B2VR |
050-5913
Rev
A
5-2004
Typical Performance Curves
APT50M85B2VR_LVR
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
4.5V
6.5V
4V
5.5V
5V
VGS =15 &10 V
6V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS = 10V @ 28A
I
D = 28A
V
GS = 10V
0.0846
0.116
0.0122F
0.249F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50M85B2VRG | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85LVR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85LVRG | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85B2VR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50N60JCU2 | 52 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M85B2VR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET |
| APT50M85B2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT50M85JVFR | 功能描述:MOSFET N-CH 500V 50A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT50M85JVR | 功能描述:MOSFET N-CH 500V 50A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT50M85LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。